RJH30H2DPK-M0资料datasheet下载批发采购-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
RJH30H2DPK-M0	文件：158.09 Kbytes Page：7 Pages	Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tr = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max ● Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ 文件：158.09 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJH30H2DPK-M0	文件：300 bytes Page：1 Pages	Silicon N Channel IGBT High speed power switching ● Trench gate and thin wafer technology (G6H-II series)\n● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ\n● High speed switching: tr = 100 ns typ, tf = 180 ns typ\n● Low leak current: ICES = 1 A max\n● Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ;	Renesas 瑞萨	Renesas
RJP30H2DPK-M0	文件：159.37 Kbytes Page：6 Pages	Trench gate and thin wafer technology 文件：159.37 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
RJP30H2DPK-M0	文件：166.25 Kbytes Page：7 Pages	Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tf = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max 文件：166.25 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS

更多RJH30H2DPK-M0供应商更新时间2025-10-7 11:10:00