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RJP30H2DPK-M0中文资料PDF规格书
RJP30H2DPK-M0规格书详情
Features
● Trench gate and thin wafer technology (G6H-II series)
● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
● High speed switching: tf = 100 ns typ, tf = 180 ns typ
● Low leak current: ICES = 1 A max
产品属性
- 型号:
RJP30H2DPK-M0
- 制造商:
RENESAS
- 制造商全称:
Renesas Technology Corp
- 功能描述:
Silicon N Channel IGBT High speed power switching
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS |
10+ |
TO-3P |
335 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS |
2020+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
RENESAS/瑞萨 |
23+ |
NA/ |
612 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
RENESAS/瑞萨 |
27 |
询价 | |||||
RENESAS/瑞萨 |
23+ |
TO-3P |
90000 |
原装原盘 |
询价 | ||
RENESAS |
TO-3P |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
RENESAS |
2023+ |
TO-247 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
RENESAS/瑞萨 |
2022 |
TO-3P |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
RENESAS |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 |