RJP30H2DPK-M0规格书供应代理瑞萨RENESAS-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
RJP30H2DPK-M0	文件：166.25 Kbytes Page：7 Pages	Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tf = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max 文件：166.25 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJP30H2DPK-M0	文件：159.37 Kbytes Page：6 Pages	Trench gate and thin wafer technology 文件：159.37 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
RJP30H2DPK-M0	文件：300 bytes Page：1 Pages	Silicon N Channel IGBT High speed power switching	Renesas 瑞萨	Renesas
RJP30H2DPK-M0-11	文件：159.37 Kbytes Page：6 Pages	Trench gate and thin wafer technology 文件：159.37 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
RJP30H2DPK-M0-T2	文件：300 bytes Page：1 Pages	Silicon N Channel IGBT High speed power switching * Trench gate and thin wafer technology (G6H-II series)\n\n* Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ\n\n* High speed switching: tf = 100 ns typ, tf = 180 ns typ\n * Low leak current: ICES= 1 A max	Renesas 瑞萨	Renesas
RJP30H2DPK-M0-11	文件：300 bytes Page：1 Pages	Trench gate and thin wafer technology	Renesas 瑞萨	Renesas

更多RJP30H2DPK-M0供应商更新时间2025-10-9 14:03:00