RJP30H2DPK-M0规格书供应代理瑞萨RENESAS-114ic电子网

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RJP30H2DPK-M0	文件：166.25 Kbytes Page：7 Pages	Silicon N Channel IGBT High speed power switching Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.4Vtyp ●Highspeedswitching:tf=100nstyp,tf=180nstyp ●Lowleakcurrent:ICES=1Amax	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
RJP30H2DPK-M0	文件：159.37 Kbytes Page：6 Pages	Trench gate and thin wafer technology	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
RJP30H2DPK-M0-11	文件：159.37 Kbytes Page：6 Pages	Trench gate and thin wafer technology	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
RJH30H2DPK-M0	文件：158.09 Kbytes Page：7 Pages	SiliconNChannelIGBTHighspeedpowerswitching Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.4Vtyp ●Highspeedswitching:tr=100nstyp,tf=180nstyp ●Lowleakcurrent:ICES=1Amax ●Built-inFastRecoveryDiode:VF=1.4Vtyp,trr=23nstyp	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

更多RJP30H2DPK-M0供应商更新时间2025-5-25 14:01:00