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RJH30H2DPK-M0中文资料瑞萨数据手册PDF规格书
RJH30H2DPK-M0规格书详情
特性 Features
● Trench gate and thin wafer technology (G6H-II series)
● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
● High speed switching: tr = 100 ns typ, tf = 180 ns typ
● Low leak current: ICES = 1 A max
● Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ
产品属性
- 型号:
RJH30H2DPK-M0
- 制造商:
RENESAS
- 制造商全称:
Renesas Technology Corp
- 功能描述:
Silicon N Channel IGBT High speed power switching
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RJH |
24+ |
SMD |
105 |
原装现货假一赔十 |
询价 | ||
RENESAS |
24+ |
TO-3P |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
RENESAS/瑞萨 |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO3P |
12000 |
只做原装、原厂优势渠道、假一赔十 |
询价 | ||
RENESA |
2406+ |
TO-3P |
11260 |
诚信经营!进口原装!量大价优! |
询价 | ||
RENESAS |
24+ |
T0-3P |
16900 |
原装正品现货支持实单 |
询价 | ||
RENESAS |
23+ |
T0-3P |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
RENESAS |
10+ |
T0-3P |
1080 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS |
2023+ |
T0-3P |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
RENESAS |
20+ |
T0-3P |
1080 |
进口原装现货,假一赔十 |
询价 |