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RJH30H1DPP-M0中文资料瑞萨数据手册PDF规格书
RJH30H1DPP-M0规格书详情
特性 Features
● Trench gate and thin wafer technology (G6H-II series)
● High speed switching: tr =80 ns typ., tf = 150 ns typ.
● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
● Low leak current: ICES = 1 μA max.
● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.
● Isolated package: TO-220FL
产品属性
- 型号：
RJH30H1DPP-M0
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
Silicon N Channel IGBT High speed power switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
RENESAS |
23+ |
T0-3P |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
RJH |
24+ |
SMD |
105 |
原装现货假一赔十 |
询价 | ||
RENESAS |
23+ |
TO-220F |
350 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS |
25+ |
TO-220F |
8800 |
公司只做原装,详情请咨询 |
询价 | ||
RENESAS |
24+ |
TO-220F |
16900 |
原装正品现货支持实单 |
询价 | ||
RENESAS/HITACHI |
2223+ |
TO-263-ORIG |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
RENESAS |
20+ |
TO-220F |
350 |
进口原装现货,假一赔十 |
询价 | ||
RENESAS |
2023+ |
TO-220F |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 |
