RJH30H1DPP-M0规格书行情报价瑞萨RENESAS-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
RJH30H1DPP-M0	文件：158.32 Kbytes Page：7 Pages	Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ. 文件：158.32 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJP30H1DPP-M0	文件：157.32 Kbytes Page：7 Pages	Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 A max. ● Isolated package TO-220FL 文件：157.32 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJH60D2D00	文件：0 bytes Page：0 Pages	RENESAS TO220	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
RJH60D2DPP	文件：0 bytes Page：0 Pages	RENESAS TO220F	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
RJH60D3DPP	文件：0 bytes Page：0 Pages	RENESAS TO220F	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多RJH30H1DPP-M0供应商更新时间2025-10-8 17:02:00