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RJP30H1DPP-M0中文资料瑞萨数据手册PDF规格书
RJP30H1DPP-M0规格书详情
特性 Features
● Trench gate and thin wafer technology (G6H-II series)
● High speed switching: tr =80 ns typ., tf = 150 ns typ.
● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
● Low leak current: ICES = 1 A max.
● Isolated package TO-220FL
产品属性
- 型号：
RJP30H1DPP-M0
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
Silicon N Channel IGBT High speed power switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
20+ |
TO-263 |
328 |
进口原装现货,假一赔十 |
询价 | ||
RENESAS/瑞萨 |
24+ |
NA/ |
3400 |
原厂直销,现货供应,账期支持! |
询价 | ||
RENESAS |
23+ |
TO-263 |
328 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
RENESAS |
2511 |
TO-263 |
328 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
RENESAS |
20+ |
TO-263 |
4520 |
原装正品现货 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
RENESAS/瑞萨 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
