丝印：C9；Package：TSOP6；40 V, 4 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND-Q 2. Features and benefits • Ultra low collector-emitter saturation voltage VCEsat • 4 A continuous collector current capability IC • Up to 15

文件：306.81 Kbytes 页数：14 Pages

NEXPERIA

安世

40 V, 4 A PNP low VCEsat transistor

PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS302ND-Q

Nexperia

安世

20 V, 5.1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：310.75 Kbytes 页数：16 Pages

NEXPERIA

安世

SCREW TYPE SERIES

文件：326.51 Kbytes 页数：1 Pages

DBLECTRO

Indicates Phase Presence

文件：98.77 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Extra taps upon request

文件：101.35 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司