丝印：C9；Package：TSOP6；40 V, 4 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND-Q 2. Features and benefits • Ultra low collector-emitter saturation voltage VCEsat • 4 A continuous collector current capability IC • Up to 15

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 4 A PNP low VCEsat transistor

PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS302ND-Q

Nexperia

安世

20 V, 5.1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

SCREW TYPE SERIES

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DBLECTRO

Indicates Phase Presence

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Extra taps upon request

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VishayVishay Siliconix

威世科技