丝印：BH；Package：SOT23；20 V, 4.3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PT-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector curre

文件：346.26 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 4.3 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4021PT-Q

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20 V, 7 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PX. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • Hig

文件：727.03 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 8 A NPN low VCEsat (BISS) transistor

文件：732.73 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司