20 V, 7 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PX. Features and benefits • Very low collector-emitter saturation voltage VCEsat •

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恩XP

丝印：6D；Package：SOT89；20 V, 7 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PX. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • Hig

文件：727.03 Kbytes 页数：14 Pages

NEXPERIA

安世

20 V, 7 A NPN low VCEsat (BISS) transistor

General description\nNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\nPNP complement: PBSS4021PX.Features and benefits\n• Very low collector-emitter saturation voltage VCEsat\n• High collector c

恩XP

20 V, 7 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4021PX. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) area than for conventiona;

Nexperia

安世

20 V, 7 A NPN low VCEsat transistor

NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4021PX-Q

Nexperia

安世

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 7A SOT89

Nexperia USA Inc.