40 V, 500 mA PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High collector current gain (hFE)

文件：109.75 Kbytes 页数：11 Pages

PHI

飞利浦

40 V, 500 mA PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High collector current gain (hFE)

文件：173.01 Kbytes 页数：11 Pages

恩XP

丝印：1T；Package：SC-75；40 V, 500 mA PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：286.89 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

40 V, 500 mA PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.\n NPN complement: PBSS2540E.

Nexperia

安世