BZX58550-C3V9

Marking：1T；Package：SC-79；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

BZX58550-C3V9-Q

Marking：1T；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

PBSM5240PFH

Marking：1T；Package：DFN2020-6；40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

1.1Generaldescription CombinationofPNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorand N-channelTrenchMetal-OxideSemiconductorField-EffectTransistor(MOSFET).The deviceishousedinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-Mounted Device(SMD)plasticpackag

PBSS3540E

Marking：1T；Package：SC-75；40 V, 500 mA PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PDTC123TU

Marking：1T；Package：SC-70；NPN resistor-equipped transistors; R1 = 2.2 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTD123TT

Marking：1T；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PESD18VF1BBSF

Marking：1T；Package：SOD962-2；Extremely low capacitance bidirectional ESD protection diode

1.Generaldescription ExtremelylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiode,partofthe TrEOSprotectionfamily.ThisdeviceishousedinaDSN0603-2(SOD962-2)leadlessultrasmall Surface-MountedDevice(SMD)package,designedtoprotectonesignallinefrom

S9011

Marking：1T；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ●CollectorCurrent.(IC=30mA） ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor

S9011

Marking：1T；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ●CollectorCurrent.(IC=30mA） ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor

TCK22946G

Marking：1T；Package：WCSP6E；Load Switch IC with Over current limited function

TheTCK22xxxG,TCK2065GandTCK1024GareLoadSwitchICsforpowermanagementwithOverCurrentLimitedfunctionfeaturinglowswitchonresistance,ultralowquiescentcurrent,highoutputcurrentandwideinputvoltagerange.TypicalswitchONresistanceisonly31mΩatVIN=5.0V,IOUT=-0.1