BZX58550-C4V3

Marking：1U；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

BZX58550-C4V3-Q

Marking：1U；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

KST2484

Marking：1U；Package：SOT-23；Low Noise Transistor

LowNoiseTransistor

KST2484

Marking：1U；Package：SOT-23；Low Noise Transistor

LowNoiseTransistor

NJU77251F

Marking：1U；Package：SOT-23-5；High-Speed, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+=5V,Typicalvalue,Ta=25°C) PropagationDelay(TPLH/TPHL) -NJU7725x42ns/35ns -NJU7726x125ns/32ns Rail-to-RailCommon-ModeInputVoltageRange 0.2VbeyondSupplyRails DynamicTransientStabilizerTM -Rail-to-RailInputwithlesspropagationdelay fluctuat

PDTB123TT

Marking：1U；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

Featuresandbenefits *500mAoutputcurrentcapability *Built-inbiasresistor *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PESD5V0U2BT

Marking：1U；Package：SOT23；Ultra low capacitance bidirectional double ESD protection diode

1.Generaldescription UltralowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeina SOT23(TO-236AB)smallSurface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwo datalinesfromthedamagecausedbyESD. 2.Featuresandbenefits •Bidirectional

PESD5V0U2BT-Q

Marking：1U；Package：SOT23；Ultra low capacitance bidirectional double ESD protection diode

1.Generaldescription UltralowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeina SOT23(TO-236AB)smallSurface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwo datalinesfromthedamagecausedbyESD. 2.Featuresandbenefits •Bidirectiona

PMPB48EP

Marking：1U；Package：SOT1220；30 V, single P-channel Trench MOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits •TrenchMOSFETtechnology •Smallandleadlessultrathin

PMDPB80XP

Marking：1U；Package：DFN2020-6；20 V, dual P-channel Trench MOSFET