1U

型号：BZX58550-C4V3；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

1U

型号：BZX58550-C4V3-Q；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

1U

型号：KST2484；Package：SOT-23；Low Noise Transistor

LowNoiseTransistor

1U

型号：KST2484；Package：SOT-23；Low Noise Transistor

LowNoiseTransistor

1U

型号：NJU77251F；Package：SOT-23-5；High-Speed, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+=5V,Typicalvalue,Ta=25°C) PropagationDelay(TPLH/TPHL) -NJU7725x42ns/35ns -NJU7726x125ns/32ns Rail-to-RailCommon-ModeInputVoltageRange 0.2VbeyondSupplyRails DynamicTransientStabilizerTM -Rail-to-RailInputwithlesspropagationdelay fluctuat

1U

型号：PDTB123TT；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

Featuresandbenefits *500mAoutputcurrentcapability *Built-inbiasresistor *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

1U

型号：PESD5V0U2BT；Package：SOT23；Ultra low capacitance bidirectional double ESD protection diode

1.Generaldescription UltralowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeina SOT23(TO-236AB)smallSurface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwo datalinesfromthedamagecausedbyESD. 2.Featuresandbenefits •Bidirectional

1U

型号：PESD5V0U2BT-Q；Package：SOT23；Ultra low capacitance bidirectional double ESD protection diode

1.Generaldescription UltralowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeina SOT23(TO-236AB)smallSurface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwo datalinesfromthedamagecausedbyESD. 2.Featuresandbenefits •Bidirectiona

1U

型号：PMPB48EP；Package：SOT1220；30 V, single P-channel Trench MOSFET

1.1Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits •TrenchMOSFETtechnology •Smallandleadlessultrathin

1U

型号：PMDPB80XP；Package：DFN2020-6；20 V, dual P-channel Trench MOSFET