丝印：1V；Package：SOT-23；Small Signal Transistors (NPN)

FEATURES ◆ NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. ◆ As complementary types, the PNP transistors BF821 and BF823 are recommended.

文件：49.69 Kbytes 页数：2 Pages

GE

GE Industrial Company

丝印：1V；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment.

文件：1.20678 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：1V；Package：SOT23；NPN high voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF821 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) 3. Applications • Telephony and professional communication equipment

文件：205.83 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1V；Package：SOT23；NPN high voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF821-Q 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive

文件：180.98 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1V；Package：SOT323；NPN high-voltage transistor

FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS •Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package.

文件：302.73 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1V；Package：SOT-23；Darlington Transistors

NPN Silicon • We declare that the material of product compliance with RoHS requirements.

文件：283.81 Kbytes 页数：6 Pages

FS

丝印：1V；Package：SOT-23；NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

文件：93.89 Kbytes 页数：2 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：1V；Package：SOT-23-5；High-Speed, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+ = 5V, Typical value, Ta = 25°C)  Propagation Delay (TPLH / TPHL) - NJU7725x 42ns / 35ns - NJU7726x 125ns / 32ns  Rail-to-Rail Common-Mode Input Voltage Range 0.2V beyond Supply Rails  Dynamic Transient Stabilizer TM - Rail-to-Rail Input with less propagation delay fluctuat

文件：2.060969 Mbytes 页数：31 Pages

NISSHINBO

日清纺微电子

丝印：1V；Package：DFN2020-6；20 V, dual N-channel Trench MOSFET

文件：729.37 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1V；Package：DFN2020MD-6；30 V, single P-channel Trench MOSFET

文件：750.57 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司