丝印：1V；Package：DFN2020-6；20 V, dual N-channel Trench MOSFET

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安世安世半导体(中国)有限公司

20V Dual N-Channel Enhancement Mode Power MOSFET

Feature Super high density cell design for extremely low RDS (ON) ®DFN2X2-6L package design

文件：2.61073 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

20 V, dual N-channel Trench MOSFET

文件：229.67 Kbytes 页数：13 Pages

PHI

飞利浦

20 V, dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very fast switching\n• Trench MOSFET technology\n• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm\n• Exposed drain pad for excellent thermal conduction;

Nexperia

安世

20 V, dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Nexperia

安世