7UL1T126FS

Marking：1X；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •BusBufferwith3-StateOutput Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinputvoltage

BF822

Marking：1X；Package：SOT23；NPN high voltage transistor

1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:BF823 2.Featuresandbenefits •Lowcurrent(max.50mA) •Highvoltage(max.300V) 3.Applications •Telephonyandprofessionalcommunicationequipment

BF822

Marking：1X；Package：SOT-23；Small Signal Transistors (NPN)

FEATURES ◆NPNSiliconEpitaxialPlanarTransistors especiallysuitedforapplicationinclass-B videooutputstagesofTVreceiversand monitors. ◆Ascomplementarytypes,thePNPtransistors BF821andBF823arerecommended.

BF822

Marking：1X；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Lowcurrent(max.50mA) Highvoltage(max.300V) Telephonyandprofessionalcommunicationequipment.

BF822-Q

Marking：1X；Package：SOT23；NPN high voltage transistor

1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:BF823-Q 2.Featuresandbenefits •Lowcurrent(max.50mA) •Highvoltage(max.300V) •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotive

BZX58550-C4V7

Marking：1X；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

BZX58550-C4V7-Q

Marking：1X；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

MM3Z6V8

Marking：1X；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MT6L72FS

Marking：1X；Package：fS6；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

PMFPB8032XP

Marking：1X；Package：SOT1118；20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination

1.Generaldescription Small-signalP-channelenhancementmodeField-EffectTransistor(FET)usingTrench MOSFETtechnologyandultralowVFMaximumEfficiencyGeneralApplication(MEGA) SchottkydiodecombinedinasmallandleadlessultrathinDFN2020-6(SOT1118) Surface-MountedDevice(SMD)