PMFPB8032XP中文资料安世数据手册PDF规格书

厂商型号	PMFPB8032XP
功能描述	20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
丝印标识	1X
封装外壳	SOT1118
文件大小	778.16 Kbytes
页面数量	16 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-7-31 23:00:00
人工找货	PMFPB8032XP价格和库存，欢迎联系客服免费人工找货

1. General description

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench

MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

• 1.8 V RDSon rated for low-voltage gate drive

• Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm

• Exposed drain pad for excellent thermal conduction

• Integrated ultra low VF MEGA Schottky diode

3. Applications

• Charging switch for portable devices

• DC-to-DC converters

• Power management in battery-driven portables

• Hard disk and computing power management