零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
Marking:1W;Package:fSV;CMOS Digital Integrated Circuits Silicon Monolithic FunctionalDescription •BusBufferwith3-StateOutput Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinputvoltage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Marking:1W;Package:SOT-23;SOT-23 Plastic-Encapsulate Transistors FEATURES Lowcurrent(max.-50mA) Highvoltage(max.-300V) Telephonyandprofessionalcommunicationequipment. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
Marking:1W;Package:SOT23;PNP high-voltage transistors FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. DESCRIPTION PNPtransistorinaSOT23plasticpackage.NPNcomplements:BF820,BF822. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking:1W;Package:SOT-23;Small Signal Transistors (PNP) FEATURES ◆PNPSiliconEpitaxialPlanarTransistorsespeciallysuitedforapplicationinclassBvideooutputstagesofTVreceiversandmonitors. ◆Ascomplementarytypes,theNPNtransistorsBF820andBF822arerecommended. | GE GE Industrial Company | GE | ||
Marking:1W;Package:U-WLB1010-4;P-CHANNEL ENHANCEMENT MODE MOSFET Features LD-MOSTechnologywiththeLowestFigureofMerit: RDS(ON)=85mΩtoMinimizeOn-StateLosses Qg=3.7nCforUltra-FastSwitching VGS(TH)=-0.6VTyp.foraLowTurn-OnPotential CSPwithFootprint1.0mm×1.0mm Height=0.62mmforLowProfile ESD=3kVHBMProtectionofGate Tota | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
Marking:1W;Package:fS6;Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Marking:1W;Package:SOT-23-5;High-Speed, Rail-to-Rail Input, CMOS Comparator FEATURES (V+=5V,Typicalvalue,Ta=25°C) PropagationDelay(TPLH/TPHL) -NJU7725x42ns/35ns -NJU7726x125ns/32ns Rail-to-RailCommon-ModeInputVoltageRange 0.2VbeyondSupplyRails DynamicTransientStabilizerTM -Rail-to-RailInputwithlesspropagationdelay fluctuat | NISSHINBONisshinbo Micro Devices Inc. 日清纺微电子?清纺微电?株式会社 | NISSHINBO | ||
Marking:1W;Package:SOT-23;SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS | Zetex Zetex Semiconductors | Zetex | ||
Marking:1W;Package:DFN2020-6;20 V, complementary Trench MOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking:1W;Package:DFN2020MD-6;30 V, single P-channel Trench MOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
详细参数
- 型号:
1W
- 功能描述:
桥式整流器 1.0 Amp 50 Volt 50 Amp IFSM
- RoHS:
否
- 制造商:
Vishay
- 产品:
Single Phase Bridge
- 峰值反向电压:
1000 V 最大 RMS
- 正向连续电流:
4.5 A
- 最大浪涌电流:
450 A
- 正向电压下降:
1 V
- 最大反向漏泄电流:
10 uA
- 最大工作温度:
+ 150 C
- 长度:
30.3 mm
- 宽度:
4.1 mm
- 高度:
20.3 mm
- 安装风格:
Through Hole
- 封装/箱体:
SIP-4
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
2410+ |
DO-35 |
21000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
询价 | ||
JXND/嘉兴南电 |
24+ |
SOD-323 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||
CJ/长电 |
24+ |
SOD-323 |
50000 |
只做原装,欢迎询价,量大价优 |
询价 | ||
JXND/嘉兴南电 |
24+ |
SOD-323 |
50000 |
全新原装,一手货源,全场热卖! |
询价 | ||
ST |
23+ |
原厂封装 |
9526 |
询价 | |||
TWPEC |
2016+ |
SMD |
8000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
TSC |
23+ |
圆桥 |
80000 |
主营桥堆系列,真实库存 |
询价 | ||
ANAREN |
24+/25+ |
1046 |
原装正品现货库存价优 |
询价 | |||
MURATA |
23+ |
SMD |
9980 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
询价 | ||
BOURNS |
2020+ |
SOP8 |
599 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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