丝印：1W；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Bus Buffer with 3-State Output Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input voltage

文件：202.16 Kbytes 页数：12 Pages

TOSHIBA

东芝

丝印：1W；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Low current (max.-50 mA) High voltage (max.-300V) Telephony and professional communication equipment.

文件：1.20702 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：1W；Package：SOT23；PNP high-voltage transistors

FEATURES •Low current (max. 50 mA) •High voltage (max. 300 V). APPLICATIONS •Telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822.

文件：288.64 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1W；Package：SOT-23；Small Signal Transistors (PNP)

FEATURES ◆ PNP Silicon Epitaxial Planar Transistors especially suited for application in classB video output stages of TV receivers and monitors. ◆ As complementary types, the NPN transistors BF820 and BF822 are recommended.

文件：49.71 Kbytes 页数：2 Pages

GE

GE Industrial Company

丝印：1W；Package：U-WLB1010-4；P-CHANNEL ENHANCEMENT MODE MOSFET

Features LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 85mΩ to Minimize On-State Losses Qg = 3.7nC for Ultra-Fast Switching VGS(TH) = -0.6V Typ. for a Low Turn-On Potential CSP with Footprint 1.0mm × 1.0mm Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate Tota

文件：596.01 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：1W；Package：fS6；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：1W；Package：SOT-23-5；High-Speed, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+ = 5V, Typical value, Ta = 25°C)  Propagation Delay (TPLH / TPHL) - NJU7725x 42ns / 35ns - NJU7726x 125ns / 32ns  Rail-to-Rail Common-Mode Input Voltage Range 0.2V beyond Supply Rails  Dynamic Transient Stabilizer TM - Rail-to-Rail Input with less propagation delay fluctuat

文件：2.060969 Mbytes 页数：31 Pages

NISSHINBO

日清纺微电子

丝印：1W；Package：SOT-23；SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS

文件：46.2 Kbytes 页数：2 Pages

Zetex

丝印：1W；Package：DFN2020-6；20 V, complementary Trench MOSFET

文件：1.89801 Mbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1W；Package：DFN2020MD-6；30 V, single P-channel Trench MOSFET

文件：743.7 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司