丝印：S306NZ；Package：SOT223；100 V, 5.1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 5.1 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS306PZ-Q

Nexperia

安世

100 V, 3.7 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 4.1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig

文件：122.63 Kbytes 页数：14 Pages

PHI

飞利浦