100 V, 3.7 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NX. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capabili

文件：216.05 Kbytes 页数：15 Pages

恩XP

丝印：5N；Package：SC-62；100 V, 3.7 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：329.43 Kbytes 页数：16 Pages

NEXPERIA

安世

PNP Transistors

文件：1.75985 Mbytes 页数：6 Pages

KEXIN

科信电子

100 V, 3.7 A PNP low V_CEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS306NX. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifie;

Nexperia

安世

100 V, 3.7 A PNP low VCEsat (BISS) transistor

恩XP

100 V, 3.7 A PNP low VCEsat transistor

访客结账MyNexperia用户结账

Nexperia

安世

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 3.7A SOT89

Nexperia USA Inc.