PBSS306NZ-Q中文资料安世数据手册PDF规格书

1. General description

NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic

package.

PNP complement: PBSS306PZ-Q

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• High-voltage DC-to-DC conversion

• High-voltage MOSFET gate driving

• High-voltage motor control

• High-voltage power switches (e.g. motors, fans)

• Automotive applications