100 V, 4.1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig

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PHI

飞利浦

丝印：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat (BISS) transistor

Features and benefits  Low collector-emitter saturation voltage VCEsat  High collector current capability IC and ICM  High collector current gain (hFE) at high IC  High efficiency due to less heat generation  Smaller Printed-Circuit Board (PCB) area than for conventional transistors

文件：915.2 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：290.03 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 4.1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualified;

Nexperia

安世

100 V, 4.1 A PNP low VCEsat transistor

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 4.1A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司