PBSS306PZ

100 V, 4.1 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PBSS306PZ

Marking：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat (BISS) transistor

Featuresandbenefits Lowcollector-emittersaturation voltageVCEsat Highcollectorcurrentcapability ICandICM Highcollectorcurrentgain(hFE)at highIC Highefficiencyduetolessheat generation SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors

PBSS306PZ-Q

Marking：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PBSS306PZ,135

Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 4.1A SOT223

Nexperia USA Inc.

PBY306

Silicon-PowerRectifiers

Silicon-PowerRectifiers •Nominalcurrent35A •Repetitivepeakreversevoltage50~1000V •MetalcaseDO-5 •Weightapprox.6g •Standardpolarity:Cathodetostud •IndexR:Anodetostud •Standardpackaging:bulk

PBY306

Silicon-Power-Rectifiers

PCH-W306

4-slotWallmountChassis

PE306

SMAFemaletoNMalePrecisionCableUsing160SeriesCoax,RoHS

PFFM306

3.0ASUFRACEMOUNTFASTRECOVERYRECTIFIERS-50-1000V

PG306R

GLASSPASSIVATEDJUNCTIONFASTSWITCHINGRECTIFIER(VOLTAGE-50to800VoltsCURRENT-3.0Amperes)

VOLTAGE50to1000VoltCURRENT3Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •Glasspassivatedjunction •Fastswitchingforhighefficiency. •LeadfreeincompliancewithEURoHS