| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat (BISS) transistor Featuresandbenefits Lowcollector-emittersaturation voltageVCEsat Highcollectorcurrentcapability ICandICM Highcollectorcurrentgain(hFE)at highIC Highefficiencyduetolessheat generation SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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