丝印：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat (BISS) transistor

Features and benefits  Low collector-emitter saturation voltage VCEsat  High collector current capability IC and ICM  High collector current gain (hFE) at high IC  High efficiency due to less heat generation  Smaller Printed-Circuit Board (PCB) area than for conventional transistors

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丝印：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

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