丝印：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

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NEXPERIA

安世

100 V, 4.1 A PNP low VCEsat transistor

Nexperia

安世

Silicon-Power Rectifiers

Silicon-Power Rectifiers • Nominal current 35 A • Repetitive peak reverse voltage 50 ~ 1000 V • Metal case DO-5 • Weight approx. 6 g • Standard polarity: Cathode to stud • Index R: Anode to stud • Standard packaging: bulk

文件：160.63 Kbytes 页数：2 Pages

Diotec

德欧泰克

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文件：129.13 Kbytes 页数：2 Pages

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4-slot Wallmount Chassis

文件：96.02 Kbytes 页数：1 Pages

PROTECHSYSTEMS

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