PBSS302PD-Q中文资料安世数据手册PDF规格书

1. General description

PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS302ND-Q

2. Features and benefits

• Ultra low collector-emitter saturation voltage VCEsat

• 4 A continuous collector current capability IC

• Up to 15 A peak current

• Very low collector-emitter saturation resistance

• High efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Power management functions

• Charging circuits

• DC-to-DC conversion

• MOSFET gate driving

• Power switches (e.g. motors, fans)