PBSS302NZ-Q分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

PBSS302NZ-Q属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由安世半导体(中国)有限公司制造生产的PBSS302NZ-Q晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。

1. General description

NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic

package.

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High efficiency due to less heat generation

• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• DC-to-DC conversion

• MOSFET gate driving

• Motor control

• Charging circuits

• Power switches (e.g. motors, fans)