丝印：S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 5.8 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified accordi;

Nexperia

安世

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBSS302NZ-Q/SOT223/SC-73

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS302ND Features ■ Ultra low collector-emitter saturation voltage VCEsat ■ 4 A continuous collector current capability IC (DC) ■ Up

文件：134.92 Kbytes 页数：14 Pages

PHI

飞利浦

40 V, 4 A PNP low VCEsat (BISS) transistor

1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND. 1.2 Features * Ultra low collector-emitter saturation voltage VCEsat * 4 A continuous collector current c

文件：264.57 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司