40 V low VCEsat PNP transistor

DESCRIPTION PNP low VCEsat transistor in a SC-89 (SOT490) plastic package. NPN complement: PBSS2540F. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistor

文件：62.24 Kbytes 页数：8 Pages

PHI

PHI

40 V low VCEsat PNP transistor

恩XP

40 V, 0.5 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to reduced heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management: –DC-DC converter –Supply line switching –Battery charg

文件：510.04 Kbytes 页数：10 Pages

NEXPERIA

安世

40 V, 0.5 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB. Features and benefits ■ Leadless ultra small SMD plastic package ■ Low package height of 0.37 mm ■

文件：1.15198 Mbytes 页数：12 Pages

NEXPERIA

安世