General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS2540MB.

Features and benefits

■ Leadless ultra small SMD plastic

package

■ Low package height of 0.37 mm

■ Low collector-emitter saturation

voltage VCEsat

■ High collector current capability IC and

ICM

■ High efficiency due to less heat

generation

■ AEC-Q101 qualified

■ Reduced Printed-Circuit Board (PCB)

requirements

Applications

■ DC-to-DC conversion

■ Supply line switching

■ Battery charger

■ LCD backlighting

■ Driver in low supply voltage

applications (e.g. lamps and LEDs)

PBSS3540MB属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安世半导体(中国)有限公司制造生产的PBSS3540MB晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。