PBSS3515VS中文资料飞利浦数据手册PDF规格书

DESCRIPTION

PNP low VCEsat double transistor in a SOT666 plastic package.

NPN complement: PBSS2515VS.

FEATURES

• 300 mW total power dissipation

• Very small 1.6 x 1.2 mm ultra thin package

• Self alignment during soldering due to straight leads

• Low collector-emitter saturation voltage

• High current capability

• Improved thermal behaviour due to flat leads

• Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and muting

• Low frequency driver circuits

• LCD backlighting

• Audio frequency general purpose amplifier applications

• Battery driven equipment (mobile phones, video cameras and hand-held devices).