15 V low VCEsat PNP double transistor

DESCRIPTION PNP low VCEsat double transistor in a SOT666 plastic package. NPN complement: PBSS2515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage •

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PHI

飞利浦

15 V low VCE(sat) PNP double transistor

DESCRIPTION PNP low VCEsat double transistor in a SOT666 plastic package. NPN complement: PBSS2515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage •

文件：309.62 Kbytes 页数：9 Pages

恩XP

丝印：35；Package：SOT666；15 V low VCEsat PNP double transistor

1. General description PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515VS 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Self alignment du

文件：201.2 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

15 V low VCEsat PNP double transistor

PNP low VCEsat double transistor in a SOT666 plastic package.\n NPN complement: PBSS2515VS. • 300 mW total power dissipation\n• Very small 1.6 x 1.2 mm ultra thin package\n• Self alignment during soldering due to straight leads\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved thermal behaviour due to flat leads\n• Replaces two SC75/SC89 packaged low VCEsat;

Nexperia

安世