PBSS303PZ

Marking：S303PZ；Package：SC-73；30 V, 5.3 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS303PZ

30 V, 5.3 A PNP low VCEsat (BISS) transistor

PBSS303PZ-Q

Marking：S303PZ；Package：SOT223；30 V, 5.3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS303NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PBSS303PZ,135

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 5.3A SOT223

Nexperia USA Inc.

PBY303

Silicon-PowerRectifiers

Silicon-PowerRectifiers •Nominalcurrent35A •Repetitivepeakreversevoltage50~1000V •MetalcaseDO-5 •Weightapprox.6g •Standardpolarity:Cathodetostud •IndexR:Anodetostud •Standardpackaging:bulk

PBY303

Silicon-Power-Rectifiers

PC303

MicrominiatureSignalRelay

FEATURES ●Microminiaturedesign ●.200inchDILspacing ●MeetsFCCpart68voltagesurge ●7.5millimeterwidth ●Bifurcatedcontactsforhighsensitivity ●Singlecoillatchingavailable ●Sealed,immersioncleanable ●LeadFree&RoHSCompliant

PC303S

MicrominiatureSurfaceMountSignalRelay

FEATURES ●Microminiaturedesign ●.200inchDILspacing ●MeetsFCCpart68voltagesurge ●7.5millimeterwidth ●Bifurcatedcontactsforhighsensitivity ●Singlecoillatchingavailable ●Sealed,immersioncleanable

PDBFS303

EnclosedPowerDistributionBlockOfferHighSCCR

PDBFS303

PowerDistributionBlocks&TerminalBlockswithHighShort-CircuitCurrentRatings