丝印：5F；Package：SC-62；80 V, 4.6 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：332.52 Kbytes 页数：16 Pages

NEXPERIA

安世

80 V, 4.6 A NPN low VCEsat (BISS) transistor

文件：219.2 Kbytes 页数：15 Pages

恩XP

80 V, 4.6 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS305PX. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifie;

Nexperia

安世

80 V, 4.6 A NPN low VCEsat (BISS) transistor

恩XP

80 V, 4.6 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS305PX-Q

Nexperia

安世

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 4.6A SOT89

Nexperia USA Inc.