80 V, 4.6 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS305PX-Q

Nexperia

安世

80 V, 5.1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：308.01 Kbytes 页数：15 Pages

NEXPERIA

安世

80 V, 5.1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：294.92 Kbytes 页数：14 Pages

NEXPERIA

安世

SINGLE CHANNEL COAXIAL, N & TNC CONNECTORS

文件：380.82 Kbytes 页数：2 Pages

FILTRONIC

PICO 305 Series Fuses - 277V UL913 Intrinsically Safe Fuse

文件：728.76 Kbytes 页数：2 Pages

Littelfuse

力特

Card Edge Connectors 0.156” (3.96mm) Pitch

Features: • 0.156” (3.96mm) contact spacing x 0.140” (3.56mm) row spacing • Accepts 0.062” (1.57mm) nominal thickness P.C. board • Low profile insulator body, 0.470” (11.94mm) • Contact termination options include P.C. tail, wire hole, extender board bends • Dual row configuration • Large va

文件：278.56 Kbytes 页数：3 Pages

EDAC

亚得电子