丝印：S304PZ；Package：SC-73；60 V, 4.5 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：306.77 Kbytes 页数：15 Pages

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安世安世半导体(中国)有限公司

60 V, 4.5 A PNP low VCEsat (BISS) transistor

文件：193.28 Kbytes 页数：14 Pages

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丝印：S304PZ；Package：SOT223；60 V, 4.5 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS304NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：293.08 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 4.5 A PNP low V_CEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS304NZ. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifie;

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60 V, 4.5 A PNP low VCEsat (BISS) transistor

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功率三极管

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益嘉源

Package：TO-261-4，TO-261AA；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 4.5A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司