PBSS304PZ-Q中文资料安世数据手册PDF规格书

厂商型号	PBSS304PZ-Q
功能描述	60 V, 4.5 A PNP low VCEsat transistor
丝印标识	S304PZ
封装外壳	SOT223
文件大小	293.08 Kbytes
页面数量	14 页
生产厂商	NEXPERIA Nexperia B.V. All rights reserved
中文名称	安世安世半导体(中国)有限公司
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-12 16:38:00
人工找货	PBSS304PZ-Q价格和库存，欢迎联系客服免费人工找货

1. General description

PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS304NZ-Q

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• High-voltage DC-to-DC conversion

• High-voltage MOSFET gate driving

• High-voltage motor control

• High-voltage power switches (e.g. motors, fans)

• Automotive applications