PBSS302PZ

20 V, 5.5 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS302NZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PBSS302PZ

Marking：S302PZ；Package：SC-73；20 V, 5.5 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS302PZ-Q

Marking：S302PZ；Package：SOT223；20 V, 5.5 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS302NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PBSS302PZ,135

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 5.5A SOT223

Nexperia USA Inc.

PBY302

Silicon-PowerRectifiers

Silicon-PowerRectifiers •Nominalcurrent35A •Repetitivepeakreversevoltage50~1000V •MetalcaseDO-5 •Weightapprox.6g •Standardpolarity:Cathodetostud •IndexR:Anodetostud •Standardpackaging:bulk

PBY302

Silicon-Power-Rectifiers

PC302

low5mmprofile

PC302-O

PRODUCTSPECIFICATION

PC302S

MicrominiatureSurfaceMountSignalRelay

FEATURES •MicrominiatureDesign •DILPackageforPCBoardorSocket •Low5mmProfile •MeetsFCCPart68VoltageSurge •BifurcatedContactsforHighSensitivity •SingleandDualLatchingCoilAvailable •Sealed,ImmersionCleanable •RoHSCompliant: •FullyAutomatedAssembly

PDC302-CXPXXX

Lowpowerconsumption