PBSS304PX

丝印：5L；Package：SC-62；60 V, 4.2 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS304PX

60 V, 4.2 A PNP low V_CEsat (BISS) transistor; • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualified\n;

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS304NX.\n

PBSS304PX

60 V, 4.2 A PNP low VCEsat (BISS) transistor

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PBSS304PX

60 V, 4.2 A PNP low VCEsat (BISS) transistor;

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PBSS304PX-Q

60 V, 4.2 A PNP low VCEsat transistor; • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS304NX\n

PBSS304PX,115

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 4.2A SOT89

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