IRGS6B60KDTRL规格书应用电路原装现货IRF-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRGB6B60K	文件：245.45 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KD	文件：307.2 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KDPBF	文件：307.26 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KPBF	文件：295.97 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KD	文件：282.83 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KD	文件：273.19 Kbytes Page：12 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KDPBF	文件：254.29 Kbytes Page：12 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •R	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KDPBF	文件：314.27 Kbytes Page：12 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60K	文件：245.45 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KD	文件：307.26 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KD	文件：307.2 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KPBF	文件：296.93 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KPBF	文件：295.97 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGSL6B60K	文件：245.45 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGSL6B60KD	文件：307.26 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGSL6B60KD	文件：307.2 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGSL6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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详细参数

型号：
IRGS6B60KDTRL
功能描述：
IGBT 模块 600V 5A
RoHS：
否
制造商：
Infineon Technologies
产品：
IGBT Silicon Modules
配置：
Dual 集电极—发射极最大电压
VCEO：
600 V
集电极—射极饱和电压：
1.95 V 在25
C的连续集电极电流：
230 A
栅极—射极漏泄电流：
400 nA
功率耗散：
445 W
最大工作温度：
+ 125 C
封装/箱体：
34MM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	IRGS6B60KDTRL	IR	23+	TO-263	12300	全新原装真实库存含13点增值税票!	询价
深圳市坤融电子科技有限公司	IRGS6B60KDTRL	IR	2024+实力库存	TO-263	30000	只做原厂渠道可追溯货源	询价
深圳市莱克讯科技有限公司	IRGS6B60KDTRL	IR	2017+	TO-263	26589	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市鹏和科技有限公司	IRGS6B60KDTRL	IR	24+	TO-263	5000	全现原装公司现货	询价
深圳市百视威讯电子科技有限公司	IRGS6B60KDTRL		23+	N/A	85800	正品授权货源可靠	询价
深圳市维尔达电子有限公司	IRGS6B60KDTRL	IR	2023+	TO-263	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	IRGS6B60KDTRL	IR	21+	TO-263	35200	一级代理/放心采购	询价
深圳市威尔健半导体有限公司	IRGS6B60KDTRL	TECCOR/LITT	23+	TO-220	69820	终端可以免费供样,支持BOM配单!	询价
深圳市澳亿芯电子科技有限公司	IRGS6B60KDTRL	IR	03+	TO-263	30000	普通	询价
深圳市河锋鑫科技有限公司	IRGS6B60KDTRL	IR	2022+	TO-263	12888	原厂代理终端免费提供样品	询价

更多IRGS6B60KDTRL供应商更新时间2024-5-22 15:14:00

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