ADVANCED PROCESS TECHNOLOGY

文件：407.51 Kbytes 页数：11 Pages

IRF

Logic-Level Gate Drive

文件：398.37 Kbytes 页数：10 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：407.51 Kbytes 页数：11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：407.51 Kbytes 页数：11 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件：1.02845 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from

文件：1.16179 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司