Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

文件：1.02856 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional ins

文件：1.41327 Mbytes 页数：8 Pages

IRF

Power MOSFET

文件：1.04117 Mbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional ins

文件：1.41327 Mbytes 页数：8 Pages

IRF

MOSFET N-CH200V HEXFET MOSFET

Vishay

威世