HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional ins

文件：1.41327 Mbytes 页数：8 Pages

IRF

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.4 Ω ID = 6.5 A FEATURES ● Logic-Level Gate Drive ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ● Lower RDS(ON) : 0

文件：282.84 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：264.64 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.

文件：226.75 Kbytes 页数：7 Pages

IRF