ADVANCED POWER MOSFET

BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.

文件：226.75 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.

文件：226.75 Kbytes 页数：7 Pages

IRF

isc N-Channel MOSFET Transistor

文件：362.41 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET N-CH 200V 9A I2PAK

ONSEMI

安森美半导体