IRLZ44Z规格书应用电路供应代理无锡固电IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRLZ44Z	文件：304.29 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：304.29 Kbytes 页数：12 Pages	IRF	IRF
IRLZ44Z	文件：362.09 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：362.09 Kbytes 页数：13 Pages	IRF	IRF
IRLZ44Z	文件：338.57 Kbytes Page：2 Pages	N-Channel MOSFET Transistor 文件：338.57 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRLZ44ZL	文件：362.09 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：362.09 Kbytes 页数：13 Pages	IRF	IRF
IRLZ44ZL	文件：304.29 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：304.29 Kbytes 页数：12 Pages	IRF	IRF
IRLZ44ZLPBF	文件：362.09 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：362.09 Kbytes 页数：13 Pages	IRF	IRF
IRLZ44ZPBF	文件：362.09 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：362.09 Kbytes 页数：13 Pages	IRF	IRF
IRLZ44ZS	文件：362.09 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：362.09 Kbytes 页数：13 Pages	IRF	IRF
IRLZ44ZS	文件：304.29 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：304.29 Kbytes 页数：12 Pages	IRF	IRF
IRLZ44ZSPBF	文件：362.09 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5m廓 , ID = 51A) Description Specifically designed for Automotive applications,this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：362.09 Kbytes 页数：13 Pages	IRF	IRF

技术参数

OPN：
IRLZ44ZPBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
55 V
RDS (on) @10V max：
13.5 mΩ
RDS (on) @4.5V max：
22.5 mΩ
ID @25°C max：
51 A
QG typ @4.5V：
24 nC
Polarity：
N
VGS(th) min：
1 V
VGS(th) max：
3 V
VGS(th)：
2 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	IRLZ44Z	IR	24+	TO-220AB	8866		询价
深圳市勤思达科技有限公司	IRLZ44Z	IR	2015+	TO-220AB	12500	全新原装,现货库存长期供应	询价
深圳市华来深电子有限公司	IRLZ44Z	IR	23+	TO-220-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市赛芯源科技有限公司	IRLZ44Z	IR	18+	TO-220	41200	原装正品,现货特价	询价
中天科工半导体（深圳）有限公司	IRLZ44Z	IR/VISHAY	20+	TO-220	36900	原装优势主营型号-可开原型号增税票	询价
深圳市科雨电子有限公司	IRLZ44Z	INFINEON	25+	TO-220	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	IRLZ44Z	Infineon	22+	NA	2118	加我QQ或微信咨询更多详细信息,	询价
深圳市威尔健半导体有限公司	IRLZ44Z	IR/VISHAY	23+	TO-220	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	IRLZ44Z	IR	21+	TO-220	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IRLZ44Z	Infineon Technologies	22+	TO2203	9000	原厂渠道,现货配单	询价

更多IRLZ44Z供应商更新时间2025-12-13 16:30:00

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