| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRLZ14S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：294.4 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLZ14S | Power MOSFET FEATURES • Advanced process technology • Surface-mount • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or par 文件：396.23 Kbytes 页数：11 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLZ14S | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：291.75 Kbytes 页数：10 Pages | IRF | IRF | |
IRLZ14S | Power MOSFET 文件：317.61 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
Power MOSFET FEATURES • Advanced process technology • Surface-mount • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or par 文件：396.23 Kbytes 页数：11 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：291.75 Kbytes 页数：10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：294.4 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件：294.4 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET 文件：317.61 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET 文件：317.61 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号：
IRLZ14S
- 功能描述：
MOSFET N-Chan 60V 10 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 263 |
161387 |
明嘉莱只做原装正品现货 |
询价 | ||
VishayIR |
24+ |
TO-263 |
830 |
询价 | |||
IR |
1415+ |
TO-263 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
IR |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
IR |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
25+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VB |
21+ |
D2PAK |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 | ||
Vishay Siliconix |
2022+ |
TO-263-3,D2Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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