Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：1.01255 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：258.43 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.14656 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.14817 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Logic-level gate drive;

Vishay

威世

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：258.43 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 100V ♦ Lower RDS(ON): 0.046Ω(Typ.)

文件：244.45 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：289.69 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • It is intended for general purpose switching applications • FEATURES • Low drain-source on-resistance: RDS(on) ≤ 44mΩ (max) • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable oper

文件：338.49 Kbytes 页数：2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With To-262 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：300.11 Kbytes 页数：2 Pages

ISC

无锡固电