IRGB6B60KD技术资料参数供应商报价英飞凌-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRGB6B60KD	文件：307.2 Kbytes Page：15 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KDPBF	文件：307.26 Kbytes Page：15 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KDPBF	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：TO-220-3 类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 13A 90W TO220AB	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IRGB6B60K	文件：245.45 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KPBF	文件：295.97 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KD	文件：282.83 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KD	文件：273.19 Kbytes Page：12 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KDPBF	文件：254.29 Kbytes Page：12 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •R	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KDPBF	文件：314.27 Kbytes Page：12 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60K	文件：245.45 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KD	文件：307.26 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KD	文件：307.2 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KPBF	文件：296.93 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KPBF	文件：295.97 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGSL6B60K	文件：245.45 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGSL6B60KD	文件：307.26 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGSL6B60KD	文件：307.2 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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详细参数

型号：
IRGB6B60KD
制造商：
International Rectifier
功能描述：
SINGLE IGBT, 600V, 13A, Transistor
Type：
IGBT, DC Collector
Current：
13A, Collecto

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	IRGB6B60KD	IR	08+(pbfree)	TO-220AB	8866		询价
深圳市弘为电子有限公司	IRGB6B60KD	IR	16+	原厂封装	150	原装现货假一罚十	询价
深圳市科恒伟业电子有限公司	IRGB6B60KD	IR	2016+	TO-220	6528	房间原装进口现货假一赔十	询价
深圳市博浩通科技有限公司	IRGB6B60KD	IR	23+	TO-220AB	8600	全新原装现货	询价
深圳市勤思达科技有限公司	IRGB6B60KD	IR	2015+	TO-220AB	12500	全新原装,现货库存长期供应	询价
深圳市永贝尔科技有限公司	IRGB6B60KD	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳宇航军工半导体有限公司	IRGB6B60KD	IR	19+	TO-220	75150	原厂代理渠道,每一颗芯片都可追溯原厂；	询价
深圳市百视威讯电子科技有限公司	IRGB6B60KD		23+	N/A	85800	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	IRGB6B60KD	IR/VISHAY	23+	TO-TO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳市维尔达电子有限公司	IRGB6B60KD	IR	2023+	TO-220AB	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价

更多IRGB6B60KD供应商更新时间2024-4-30 16:30:00

详细参数

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