IRGIB6B60KD资料使用说明书贸易商英飞凌IRF-114ic电子网

首页 >IRGIB6B60KD>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRGIB6B60KD	文件：273.19 Kbytes Page：12 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KD	文件：282.83 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KD116P	文件：282.83 Kbytes Page：13 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KDPBF	文件：254.29 Kbytes Page：12 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •R	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KDPBF	文件：314.27 Kbytes Page：12 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KDPBF_15	文件：314.27 Kbytes Page：12 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGIB6B60KD116P	文件：100 bytes Page：1 Pages	包装：管件封装/外壳：TO-220-3 整包类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 11A 38W TO220FP	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IRGIB6B60KDPBF	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：TO-220-3 整包类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 11A 38W TO220FP	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IRGB6B60K	文件：245.45 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KD	文件：307.2 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KDPBF	文件：307.26 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGB6B60KPBF	文件：295.97 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60K	文件：245.45 Kbytes Page：13 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KD	文件：307.2 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KD	文件：307.26 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KDPBF	文件：316.13 Kbytes Page：15 Pages	INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KPBF	文件：296.93 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRGS6B60KPBF	文件：295.97 Kbytes Page：14 Pages	INSULATEDGATEBIPOLARTRANSISTOR Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

12 >>>

详细参数

型号：
IRGIB6B60KD
制造商：
IRF
制造商全称：
International Rectifier
功能描述：
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	IRGIB6B60KD	IR	2015+	TO-220F	12500	全新原装,现货库存长期供应	询价
深圳市特顺芯科技有限公司	IRGIB6B60KD	IR	08+(pbfree)	TO-220FullPak	8866		询价
深圳市弘为电子有限公司	IRGIB6B60KD	IR	16+	原厂封装	2000	原装现货假一罚十	询价
深圳市博浩通科技有限公司	IRGIB6B60KD	IR	23+	TO-220F	8600	全新原装现货	询价
深圳市永贝尔科技有限公司	IRGIB6B60KD	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市百视威讯电子科技有限公司	IRGIB6B60KD		23+	N/A	85400	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	IRGIB6B60KD	IR/VISHAY	23+	TO-TO-220F	12300	全新原装真实库存含13点增值税票!	询价
瀚佳科技(深圳)有限公司	IRGIB6B60KD	IR	2020+	TO-220F	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市威尔健半导体有限公司	IRGIB6B60KD	NEC	23+	TO-252	69820	终端可以免费供样,支持BOM配单!	询价
深圳市国宇半导体科技有限公司	IRGIB6B60KD	IR/VISHAY	23+	TO-220F	10000	公司只做原装正品	询价

更多IRGIB6B60KD供应商更新时间2024-5-1 11:03:00

详细参数

相关规格书

相关库存