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IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex

文件:449.99 Kbytes 页数:9 Pages

INFINEON

英飞凌

IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:2.39581 Mbytes 页数:8 Pages

IRF

IRL3705NPBF

ADVANCED PROCESS TECHNOLOGY

文件:487.11 Kbytes 页数:9 Pages

IRF

IRL3705NPBF

isc N-Channel MOSFET Transistor

文件:316.38 Kbytes 页数:2 Pages

ISC

无锡固电

IRL3705NPBF_15

ADVANCED PROCESS TECHNOLOGY

文件:487.11 Kbytes 页数:9 Pages

IRF

详细参数

  • 型号:

    IRL3705NPBF

  • 功能描述:

    MOSFET MOSFT 55V 77A 65.3nC 10mOhm LogLvAB

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRL3705NPBF即刻询购立享优惠#长期有货
询价
IR
24+
TO-220
15000
全新原装的现货
询价
IR
23+
TO-220AB
65400
询价
IR
25+
TO-220
22000
原装现货假一罚十
询价
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
07+
TO-220AB
1000
全新原装 绝对有货
询价
IR
17+
TO-220
6200
100%原装正品现货
询价
IR
23+
TO-220
5000
原装正品,假一罚十
询价
Infineon
24+
NA
3653
进口原装正品优势供应
询价
IR
25+
TO-220AB
45000
绝对全新原装公司长期有货
询价
更多IRL3705NPBF供应商 更新时间2026-4-14 17:31:00